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Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties by I. García; I. Rey-Stolle; B. Galiana; C. Algora is a Engineering article available to read on EtoBox.

What is Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties about?

The use of tellurium as n-type dopant for GaAs and InP has several advantages, including a high incorporation efficiency, the very high doping levels achievable and a low diffusion coefficient. However, its use to dope Ga x In 1Àx P is not straightforward, since it shows several problems like a remarkable memory effect and an acute inertia of the material to become Te-doped, which gives rise to gradual doping profiles. In this paper, all these phenomena are studied and quantified using secondary ion mass spectroscopy (SIMS) and electrochemical CV profiling (ECV) measurements. Concerning the gradual doping profiles, their origin is linked to the interaction of Te and In in the gas phase and on the growth surface. A phenomenological explanation is given for this effect although the exact physical processes behind remain to be defined.

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Author

I. García; I. Rey-Stolle; B. Galiana; C. Algora

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)