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About this Engineering article
Charge Trapping of HfLaTaON-Gated Metal-Oxide-Semiconductor Capacitors with Various Tantalum Concentrations by Cheng, Chin-Lung; Tsai, Hung-Yang is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Cheng, Chin-Lung; Tsai, Hung-Yang
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 1099-0062)
- Published
- 2011
- Language
- EN
- Field
- Engineering (Physical Sciences)