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The document discusses power bipolar junction transistors (BJTs). It describes the structure of an npn power BJT, noting that it contains a drift region to provide high breakdown voltage capability. The characteristics of a power BJT are examined, including input characteristics showing the relationship between base current and base-emitter voltage, and output characteristics showing the relationship between collector current and collector-emitter voltage. Switching waveforms are presented, identifying the

Author

Shivankar Pandey

Language

EN