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Analytical modelling for the frequency behavior of two distinct modes in nano-constriction spin Hall nano-oscillator by Ghanatian, H.; Rajabali, M.; Khymyn, R.; Kumar, A.; González, V. H.; Farkhani, H.; Åkerman, J.; Moradi, F. is a scholarly article available to read on EtoBox.

What is Analytical modelling for the frequency behavior of two distinct modes in nano-constriction spin Hall nano-oscillator about?

Nano-constriction spin-Hall nano-oscillators (NC-SHNOs) have garnered considerable interest due to their potential use as efficient and adjustable nano-sized sources of microwave signals, with high-frequency tunability, adaptable design layout, and CMOS compatibility. In order to facilitate system- and circuit-level designs based on the NC-SHNOs, it is essential to have an analytical model capable of predicting the behavior of the NC-SHNO. In this paper, we introduce an analytical model to describe the frequency behavior of a single NC-SHNO in an in-plane magnetic field while considering the Oersted field. The model is divided into two regions based on the direct current value: the "linear-like" and "bullet" modes. Each region is characterized by distinct concepts and equations. The first region, the "linear-like mode," emerges from the nano-constriction edges and progresses toward the center of the active area of the NC-SHNO. In contrast, the second regime, the localized "bullet mode," exhibits negative nonlinearity, where increasing the current will lead to a decrease in frequency. The model's validity is confirmed through experimental data obtained from electrical RF measurement

Author

Ghanatian, H.; Rajabali, M.; Khymyn, R.; Kumar, A.; González, V. H.; Farkhani, H.; Åkerman, J.; Moradi, F.

Published

2024

Language

EN