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About this Engineering article
Study of the Impact of the Time-delay Effect on the Critical Dimension of a Tungsten Silicide/polysilicon Gate After Reactive Ion Etching by Lin, Shih-Po; Ou, Chen-Hsien; Lee, Szetsen; Tien, Yu-Chung; Hsu, Chin-Fa is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lin, Shih-Po; Ou, Chen-Hsien; Lee, Szetsen; Tien, Yu-Chung; Hsu, Chin-Fa
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)
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