About this scholarly article

International Electron Devices Meeting. Technical Digest - Anomalous hot-carrier induced degradation in very narrow channel nMOSFETs with STI structure by Nishigohri, M.; Ishimaru, K.; Takahashi, M.; Unno, Y.; Okayama, Y.; Matsuoka, F.; Kinugawa, M. is a scholarly article available to read on EtoBox.

Author

Nishigohri, M.; Ishimaru, K.; Takahashi, M.; Unno, Y.; Okayama, Y.; Matsuoka, F.; Kinugawa, M.

Publisher

IEEE

Published

1996