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About this Engineering article
Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy by Gendry, M.; Drouot, V.; Santinelli, C.; Hollinger, G. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Gendry, M.; Drouot, V.; Santinelli, C.; Hollinger, G.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1992
- Field
- Engineering (Physical Sciences)