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Parametric study on controllable growth of SrZrS3 thin films with good conductivity for photodetectors by Yurun Liang; Yuewen Zhang; Jie Xu; Jingli Ma; Huifang Jiang; Xin Li; Baolin Zhang; Xu Chen; Yongtao Tian; Yanbing Han; Zhifeng Shi is a Materials Science article available to read on EtoBox.

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SrZrS 3 is a promising chalcogenide perovskite with unique advantages including high abundance of consisting elements, high chemical stability, strong light absorption above its direct band gap, and excellent carrier transport ability. While unfortunately, due to the lack of breakthroughs in its thin film synthesis technique, its optoelectronic properties are not fully investigated, not to mention the device applications. In this work, large-area and uniform SrZrS 3 thin film (5 cm × 5 cm) was prepared by facile sputtering method, followed by a post-annealing treatment at a high temperature of 1000 °C for 2-12 h under CS 2 atmosphere. All SrZrS 3 samples prepared adopt distorted orthorhombic structure with pnma space group and have high crystallinity. In addition, the band gap of SrZrS 3 thin film is measured to be 2.29 eV, higher than that of the powder form (2.06 eV). Importantly, the light absorption coefficient of SrZrS 3 thin film reaches over 10 5 cm -1 , and the carrier mobility is as high as 106 cm 2 /Vs. The above advantages allow us to use the SrZrS 3 thin film as photoactive layer for photodetector applications. Finally, a symmetrically structured photoconductive detecto

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Author

Yurun Liang; Yuewen Zhang; Jie Xu; Jingli Ma; Huifang Jiang; Xin Li; Baolin Zhang; Xu Chen; Yongtao Tian; Yanbing Han; Zhifeng Shi

Publisher

Springer Science and Business Media LLC

Published

2023

Language

EN

Field

Materials Science (Physical Sciences)