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What is Neural Network Modeling for FETs about?

This document presents a neural network (NN)-based modeling framework for accurately simulating I-V and C-V characteristics of advanced field-effect transistors (FETs). The NN model demonstrates significant improvements in computational speed compared to traditional compact models, achieving nearly seven times faster simulation times. The framework is designed to handle both symmetric and asymmetric devices, providing high accuracy and smooth derivatives essential for RF applications.

Author

rodrigo Santos Batista

Language

EN