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SiGe HBT Modeling with IDSAT Equation by enkanna is a document available to read on EtoBox.

What is SiGe HBT Modeling with IDSAT Equation about?

The document discusses modeling of semiconductor devices such as SiGe heterojunction bipolar transistors (HBTs). It provides the following key points: 1) The characteristics of semiconductor devices are modeled using coupled non-linear partial differential equations for Poisson

Author

enkanna

Language

EN