Can I read Interaction of Stearic Acid Deposited on Silicon Samples With Ar/N~2~ and Ar/O~2~ Atmospheric Pressure Microwave Post‐discharges on EtoBox?

Interaction of Stearic Acid Deposited on Silicon Samples With Ar/N~2~ and Ar/O~2~ Atmospheric Pressure Microwave Post‐discharges by Cédric Noël; David Duday; Stéphane Verdier; Patrick Choquet; Thierry Belmonte; Henri‐Noël Migeon is a Engineering article available to read on EtoBox.

What is Interaction of Stearic Acid Deposited on Silicon Samples With Ar/N~2~ and Ar/O~2~ Atmospheric Pressure Microwave Post‐discharges about?

## Abstract In this work, the interactions of a stearic acid film deposited on silicon by spin coating with the post‐discharge of an Ar/N~2~ or Ar/O~2~ atmospheric pressure microwave plasma are studied. Sample surface before and after plasma treatment is analysed by means of different surface analysis methods (water contact angle measurements, XPS, ToF‐SIMS and FTMS). Both plasma treatments modify the surface but with a higher etching rate for Ar/O~2~ post‐discharges. The creation of double carbon bonds CC is observed during the treatments, with a higher quantity after Ar/N~2~ treatments. The mechanisms leading to modifications of stearic acid are discussed.

Who reads Interaction of Stearic Acid Deposited on Silicon Samples With Ar/N~2~ and Ar/O~2~ Atmospheric Pressure Microwave Post‐discharges?

Author

Cédric Noël; David Duday; Stéphane Verdier; Patrick Choquet; Thierry Belmonte; Henri‐Noël Migeon

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1612-8850)

Published

2009

Language

EN

Field

Engineering (Physical Sciences)