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This document summarizes the specifications and characteristics of an N-channel enhancement mode MOSFET from HOOYI. Key details include: - It is rated for 70V/80A operation with a typical RDS(ON) of 6mΩ at 10V gate voltage. - Intended applications include power management for inverter systems. - Packaging is in a TO-220-3L package. It is available with lead-free and halogen-free materials. - Electrical characteristics include maximum ratings, static characteristics like threshold voltage and on-resist

Author

marcos cr

Language

EN