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This study investigates the optical properties of erbium-doped AlN thin films deposited via r.f. reactive magnetron sputtering. The films exhibited room-temperature photoluminescence (PL) at 1.54 mm, with intensity enhancement observed after annealing, particularly at 1075 K. The results indicate that erbium content and thermal treatment significantly influence the structural and luminescent characteristics of the films, making them suitable for applications in optical communications and sensors.
- Author
- Kal Tar
- Language
- EN