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Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity‐doped gamma‐irradiated incommensurate TlInS~2~ by R. M. Sardarly; N. T. Mamedov; K. Wakita; Y. Shim; A. I. Nadjafov; O. A. Samedov; E. A. Zeynalova is a Materials Science article available to read on EtoBox.

What is Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity‐doped gamma‐irradiated incommensurate TlInS~2~ about?

## Abstract Temperature‐dependent dielectric and conduction properties of the impurity‐doped and gamma‐irradiated samples of TlInS~2~ semiconductor‐ferroelectric with incommensurate phase are presented. As found, in both cases a stable relaxor state is emerging in the material with temperature provided that the central ion in InS~4~ tetrahedron is replaced by an impurity atom such as Mn or Cr, or radiation dose exceeds 400 Mrad. Same as NMR‐studies, the present work drives to a conclusion that In‐displacements are among the components of the order parameter of the incommensurate phase transition. The origin of the non‐activated conductivity observed in the relaxor state of TlInS~2~ is assumed to be resonance tunneling executed by charge carriers from electron levels in the band gap through potential barriers created by incommensurate superstructure. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity‐doped gamma‐irradiated incommensurate TlInS~2~?

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Author
R. M. Sardarly; N. T. Mamedov; K. Wakita; Y. Shim; A. I. Nadjafov; O. A. Samedov; E. A. Zeynalova
Publisher
John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
Published
2006
Language
EN
Field
Materials Science (Physical Sciences)

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