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Tunneling Statistics for Analysis of Spin-readout Fidelity by Gorman, Samuel K.; He, Yu; House, Matthew G.; Keizer, Joris G.; Keith, Daniel; Fricke, Lukas; Hile, Samuel J.; Broome, Matthew A.; Simmons, Michelle Y. is a scholarly article available to read on EtoBox.

What is Tunneling Statistics for Analysis of Spin-readout Fidelity about?

We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.

Author

Gorman, Samuel K.; He, Yu; House, Matthew G.; Keizer, Joris G.; Keith, Daniel; Fricke, Lukas; Hile, Samuel J.; Broome, Matthew A.; Simmons, Michelle Y.

Published

2017

Language

EN