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Neutron Transmutation Doping of Semiconductor Materials by M. H. Young, A. T. Hunter, R. Baron, O. J. Marsh, H. V. Winston, R. R. Hart (auth.), Robert D. Larrabee (eds.) is a nonfiction available to read on EtoBox.

What is Neutron Transmutation Doping of Semiconductor Materials about?

viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers we

Who reads Neutron Transmutation Doping of Semiconductor Materials?

Author

M. H. Young, A. T. Hunter, R. Baron, O. J. Marsh, H. V. Winston, R. R. Hart (auth.), Robert D. Larrabee (eds.)

Publisher

Springer US

Published

1984

Language

EN

ISBN

9781461326953

Category

nonfiction

Subjects

Science, Engineering, Physics