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Can I read Impedance of humidity sensitive metal/porous silicon/n-Si structures on EtoBox?
Impedance of humidity sensitive metal/porous silicon/n-Si structures by D.G. Yarkin is a Engineering article available to read on EtoBox.
What is Impedance of humidity sensitive metal/porous silicon/n-Si structures about?
Porous silicon (PS) layers of 57-62% porosity were fabricated on moderately doped n-type c-Si (n-Si) substrates and thermally oxidized at 400-960 • C. It was found that the oxidation promotes subsequent condensation of water vapors in PS. Impedance of sandwich metal/PS/n-Si structures was studied. Possible undesirable effect of substrate on the impedance was discussed. An equivalent circuit of the structure was proposed. The validity of equivalent circuit was confirmed by numerical calculations. Obtained results are discussed in conjunction with humidity sensor applications.
Who reads Impedance of humidity sensitive metal/porous silicon/n-Si structures?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- D.G. Yarkin
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0924-4247)
- Published
- 2003
- Language
- EN
- Field
- Engineering (Physical Sciences)