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About this Engineering article
Electromigration of Cu and Ti atoms and dopant junction profiles in the p+-Si implanted channel under high-density current by H.H. Lin; S.L. Cheng; L.J. Chen is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- H.H. Lin; S.L. Cheng; L.J. Chen
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 1369-8001)
- Published
- 2001
- Language
- EN
- Field
- Engineering (Physical Sciences)