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Can I read Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon on EtoBox?
Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon by A Misiuk; J Bąk-Misiuk; A Barcz; A Romano-Rodriguez; I.V Antonova; V.P Popov; C.A Londos; J Jun is a Engineering article available to read on EtoBox.
What is Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon about?
E ect of annealing at up to 1400 K under argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted Czochralski or oating-zone-grown single-crystalline-silicon (FZ), were investigated by secondary ions mass spectrometry (SIMS), X-ray, transmission electron microscopy (TEM), electrical, infrared and photoluminescence (PL) methods. External stress during annealing of hydrogen-containing Si results in suppression of hydrogen out-di usion, but in its pronounced di usion into the sample depth. The result is also stress-stimulated creation of small bubbles, thermal donors and crystallographic defects and prevention of sample splitting.
Who reads Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- A Misiuk; J Bąk-Misiuk; A Barcz; A Romano-Rodriguez; I.V Antonova; V.P Popov; C.A Londos; J Jun
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0360-3199)
- Published
- 2001
- Language
- EN
- Field
- Engineering (Physical Sciences)