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Inductively Coupled Plasma Reactive Ion Etching of Titanium Nitride Thin Films in A CL 2/ar Plasma by jihoon92kk is a document available to read on EtoBox.
The document discusses the inductively coupled plasma reactive ion etching of titanium nitride (TiN) thin films using a Cl2/Ar plasma. It investigates the effects of various etch parameters, including gas concentration, coil rf power, dc-bias voltage, and gas pressure on etch rates and profiles. The study concludes that optimized conditions lead to high anisotropic etching without redeposition, making TiN films suitable for microelectronics applications.
- Author
- jihoon92kk
- Language
- EN