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Photoinduced phonon fluorescence in GaAs/AlxGa1−xAs quantum wells by W.P. Santos; A.L.A. Fonseca; D.A. Agrello; O.A.C. Nunes is a Physics and Astronomy article available to read on EtoBox.

What is Photoinduced phonon fluorescence in GaAs/AlxGa1−xAs quantum wells about?

Phonon fluorescence in semiconductor quantum wells induced by two radiation fields is investigated here. The rate of change of the interface LOphonon population due to the scattering of confined electrons in the two laser fields is calculated using first-order perturbation theory from which the amplification coefficient is derived. It was found, by considering the full photon absorption and emission processes of laser fields that for a semiconductor quantum well at arbitrary temperature, interface LO phonons propagating parallel to the direction of polarization of the external fields may be amplified over a relatively broad band of phonon wavenumber. An application is made for a GaAs/AIGaAs quantum well system.

Who reads Photoinduced phonon fluorescence in GaAs/AlxGa1−xAs quantum wells?

Author

W.P. Santos; A.L.A. Fonseca; D.A. Agrello; O.A.C. Nunes

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0038-1098)

Published

1998

Language

EN

Field

Physics and Astronomy (Physical Sciences)