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High-spin Paramagnetic Centers of Irradiated Elemental Semiconductors by R. Fedaruk; C. Stelmach; D. Yearchuck; P. Zhukovski; J. Partyka; P. Wȩgierek is a Engineering article available to read on EtoBox.

What is High-spin Paramagnetic Centers of Irradiated Elemental Semiconductors about?

The formation of high-spin (spin value SX1) paramagnetic centers (PC) in germanium, silicon and carbon under the action of the high-energy particles is analyzed. Attention is paid to a strong tendency for predominant formation of the high-spin PC fraction among all PC-types with the decrease of the atomic number of the matrix atoms in the sequencegermanium, silicon and carbon. This tendency is connected with shorter interatomic distances and mainly due to the ability of carbon to p-conjugation. The Pryce approximation for the PC with the spin-orbit nature of fine interaction has been generalized. It has been shown that transient nutation EPR spectroscopy is suitable for the direct spin-value determination in carbon materials.

Who reads High-spin Paramagnetic Centers of Irradiated Elemental Semiconductors?

Author

R. Fedaruk; C. Stelmach; D. Yearchuck; P. Zhukovski; J. Partyka; P. Wȩgierek

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)

Published

2003

Language

EN

Field

Engineering (Physical Sciences)