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Whether Ge-Rich ZrO~2~ and Ge-Rich HfO~2~ Materials Have Similar Reaction on Annealing Treatment? by Larysa Khomenkova; David Lehninger; Emil Agocs; Peter Petrik; Xavier Portier; Nadiia Korsunska; Oleksandr Melnichuk; Fabrice Gourbilleau; Johannes Heitmann is a Engineering article available to read on EtoBox.

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The properties of Ge-HfO~2~ and Ge-ZrO~2~ films were studied versus Ge content and annealing temperature by means of Raman scattering, FTIR and X-ray diffraction methods. Ge-HfO~2~ films with [Ge]<5 at.% were polycrystalline, whereas higher Ge content stabilized amorphous structure that was stable for T 800°C, the films showed appearance of monoclinic HfO~2~ or ZrO~2~ phases that was explained by the Ge content decrease via volatile GeO formation. Obtained results supported theoretical prediction of the stability of tetragonal phases in these oxides via Ge doping. However, our results showed also some difference in the phase separation process of Ge-rich HfO~2~ and Ge-rich ZrO~2~ upon thermal treatment.

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Author

Larysa Khomenkova; David Lehninger; Emil Agocs; Peter Petrik; Xavier Portier; Nadiia Korsunska; Oleksandr Melnichuk; Fabrice Gourbilleau; Johannes Heitmann

Publisher

The Electrochemical Society; Electrochemical Society, Inc. (ISSN 1938-6737)

Published

2020

Language

EN

Field

Engineering (Physical Sciences)