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X-ray-induced radiation damage in CsI, Gadox, Y2O2S and Y2O3 thin films by A.S. Tremsin; J.F. Pearson; A.P. Nichols; A. Owens; A.N. Brunton; G.W. Fraser is a Physics and Astronomy article available to read on EtoBox.

What is X-ray-induced radiation damage in CsI, Gadox, Y2O2S and Y2O3 thin films about?

The stability of CsI, CsI(Tl), Gd O S(Tb), Gd O S(Eu), Y O S(Eu) and Y O (Eu) thin "lms under bombardment by 9}18 keV X-rays is described. Both external photocurrent and scintillation light yield were measured as functions of accumulated dose at radiation #uxes of 10}10 photons s\ mm\ on Beamline 2.2 of the Daresbury Synchrotron Radiation Source (SRS). All of the samples studied showed changes of several percent (both reductions and increases) in photocurrent and scintillation light yield of several percent for accumulated doses of up to 5;10 photons mm\. No signi"cant dependence of the "lm response on the angle of X-ray incidence was observed for angles up to 453 from the normal. It was found that the accumulated dose is not the only parameter determining the degradation of photoconverter performance; the #ux rate has also to be taken into account. Scanning Electron Microscope studies of the irradiated samples did not reveal any signi"cant surface modi"cation.

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Author

A.S. Tremsin; J.F. Pearson; A.P. Nichols; A. Owens; A.N. Brunton; G.W. Fraser

Publisher

Elsevier Science; Elsevier ; Elsevier BV; ScienceOpen (ISSN 0168-9002)

Published

2001

Language

EN

Field

Physics and Astronomy (Physical Sciences)