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On The Relationship Between Field Cycling and Imprint in Ferroelectric Hf0.5Zr0.5O2 by Hunsa Wattanasasrn is a document available to read on EtoBox.

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The document discusses the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2 thin films. It provides evidence that both imprint and wake-up phenomena can be caused by electron trapping at oxygen vacancies, which impedes ferroelectric switching and causes a shift in the hysteresis loop. Resetting the films using a two-step waveform can reduce the trapped charges and return the films to a pristine-like state with wake-up behavior again.

Author

Hunsa Wattanasasrn

Language

EN