Skip to content

Opening book details…

About this Engineering article

Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack by Yafune, Norimasa; Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Kuzuhara, Masaaki is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Yafune, Norimasa; Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Kuzuhara, Masaaki
Publisher
Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
Published
2011
Field
Engineering (Physical Sciences)

More by Yafune, Norimasa; Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Kuzuhara, Masaaki

Browse all works by Yafune, Norimasa; Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki; Kuzuhara, Masaaki