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About this Engineering article
Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition by Leone, Stefano; Pedersen, Henke; Henry, Anne; Rao, Shailaja P.; Kordina, Olle; Janzén, Erik is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Leone, Stefano; Pedersen, Henke; Henry, Anne; Rao, Shailaja P.; Kordina, Olle; Janzén, Erik
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2009
- Language
- EN
- Field
- Engineering (Physical Sciences)