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This paper presents a comprehensive analysis of the intrinsic capacitances of MOSFETs, focusing on the influence of gate-source voltage (VGS) and drain-source voltage (VDS) on their performance. A new methodology for characterizing these capacitances is proposed and validated through experimental data, highlighting significant differences between Silicon Carbide (SiC) and low-voltage Silicon (Si) MOSFETs. The findings aim to enhance simulation models and improve understanding of device behavior in power ele

Author

Tuhin Karak

Language

EN