Opening book details…
Can I read Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence on EtoBox?
Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence by Q. Liu; W. Prost; F.J. Tegude is a Materials Science article available to read on EtoBox.
What is Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence about?
Ga,,,,In,,4gP grown by metal-organic vapor-phase epitaxy exhibits a growth temperature dependent ordering effect. High resolution X-ray diffraction analysis on different lattice planes of Gao.;,In 0,49P samples grown at various temperatures from 600 to 730°C results in the following interpretation: (i) the size of ordered domains continuously enlarges with increasing growth temperature, whereas (ii) the degree of ordering is maximum at about 660-680°C. This result has been proven by transmission electron microscopy. Photoluminescence in Ga,,,, In,.,,P exhibits a strong dependence of emission energy on excitation intensity (blue-shift). The influence of sample growth temperature on the slope of the PL peak blue-shift is correlated to the size of ordered domains and the degree of ordering in ordered domains. 0 1997 Elsevier Science S.A.
Who reads Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Q. Liu; W. Prost; F.J. Tegude
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)
- Published
- 1997
- Language
- EN
- Field
- Materials Science (Physical Sciences)