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Characterization of Defects and Deep Levels for GaN Power Devices by Tetsuo Narita and Tetsu Kachi is a nonfiction available to read on EtoBox.

What is Characterization of Defects and Deep Levels for GaN Power Devices about?

This book focuses on defects in GaN based on the most up-to-date intrinsic material properties, and addresses deep levels and their analytical methods within the wide bandgap of GaN. It demonstrates nanoscale structures of extended defects in GaN using atomic-scale transmission electron microscopy. The identifi cations of their deep levels and extended defect structures are presented by comparing with reported fi rst-principles calculations. It reviews emerging technologies for defect characterizations using atom probe tomography, synchrotron x-ray diffraction topography in wafer scale, and multiphoton-excitation photoluminescence, which allows for the multidirectional characterization of structural defects. Readers will gain insight into: • Electrical impacts of defects in GaN-based vertical power devices • Pathways to the defect control in the fabrication process of GaN-based electric devices • Up-to-date methods for semiconductor and electronic material defect analysis Characterization of Defects and Deep Levels for GaN Power Devices is an ideal reference for industry materials scientists working in semiconductor materials and devices. It is also suitable for experts in DLTS, TE

Who reads Characterization of Defects and Deep Levels for GaN Power Devices?

Author

Tetsuo Narita and Tetsu Kachi

Publisher

AIP Publishing LLC

Published

2020

Language

EN

ISBN

9780735422728

Category

nonfiction

Subjects

Science, Engineering, Physics