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STH60N099DM9-2AG Power MOSFET Specs by baireddy is a document available to read on EtoBox.

The STH60N099DM9-2AG is an automotive-grade N-channel Power MOSFET with a maximum voltage of 600 V and a typical on-resistance of 76 mΩ, capable of handling 27 A. It features fast-recovery body diode, low gate charge, and is designed for high-efficiency switching applications. The device is AEC-Q101 qualified and offers excellent thermal and electrical performance, making it suitable for demanding applications.

Author

baireddy

Language

EN