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Electrical properties of Ta2O5 thin films deposited on Cu by S Ezhilvalavan; Tseung-Yuen Tseng is a Engineering article available to read on EtoBox.
What is Electrical properties of Ta2O5 thin films deposited on Cu about?
The electrical and dielectric properties of reactively sputtered Ta 2 O 5 thin ®lms with Cu as the top and bottom electrodes forming a simple metal insulator metal (MIM) structure, Cu/Ta 2 O 5 /Cu/n-Si, were studied. Ta 2 O 5 ®lms subjected to rapid thermal annealing (RTA) at 8008C for 30 s in N 2 ambient crystallized the ®lm, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. The conduction mechanism at low electric ®elds (,100 kV/cm) is due to Ohmic conduction; however, the Schottky mechanism becomes predominant at high ®elds (.100 kV/cm). Present studies demonstrate the use of Cu as a potential electrode material to replace the conventional precious metal electrodes for Ta 2 O 5 storage capacitors.
Who reads Electrical properties of Ta2O5 thin films deposited on Cu?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S Ezhilvalavan; Tseung-Yuen Tseng
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)