Can I read 2SK246 Transistor Specifications on EtoBox?
2SK246 Transistor Specifications by Brendan Bradley is a document available to read on EtoBox.
What is 2SK246 Transistor Specifications about?
This document summarizes the specifications and applications of the Toshiba 2SK246 N-channel junction field effect transistor. It has a high breakdown voltage of -50V and high input impedance of -1nA maximum at -30V. Its maximum ratings include a gate-drain voltage of -50V, gate current of 10mA, drain power dissipation of 300mW, and junction temperature of 125°C. Its electrical characteristics include a gate cut-off current of -1nA maximum, gate-drain breakdown voltage of -50V, and drain current range of 1.
- Author
- Brendan Bradley
- Language
- EN