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This document discusses growth techniques for Si/Ge nanowire heterostructures using ultra-high vacuum chemical vapor deposition. It describes attempts to directly grow Ge nanowires on Si substrates which resulted in "crawling" nanowires. Successful growth of Ge/Si axial nanowire heterostructures was achieved by first growing Si nanowires and then depositing Ge. Radial and axial nanowire heterostructure geometries are discussed along with methods using colloidal gold and patterned substrates. References are

Author

daniel123214

Language

EN