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This document describes modelling the thermal coupling between internal power semiconductor dies in a water-cooled 3300V/1200A IGBT module. Temperature measurements using infrared imaging are presented and compared to a 3D finite element model of the module. A procedure for parameterizing a dynamic thermal equivalent circuit model from simulated transient thermal step responses is discussed to model the thermal coupling between dies inside the module for circuit simulation.

Author

Jesus

Language

EN