About this Engineering article
Photoindentation: A New Route to Understanding Dislocation Behavior in Light by Atsutomo Nakamura; Xufei Fang; Ayaka Matsubara; Eita Tochigi; Yu Oshima; Tatsushi Saito; Tatsuya Yokoi; Yuichi Ikuhara; Katsuyuki Matsunaga is a Engineering article available to read on EtoBox.
It was recently found that extremely large plasticity is exhibited in bulk compression of single-crystal ZnS in complete darkness. Such effects are believed to be caused by the interactions between dislocations and photoexcited electrons and/or holes. However, methods for evaluating dislocation behavior in such semiconductors with small dimensions under a particular light condition had not been well established. Here, we propose the "photoindentation" technique to solve this issue by combining nanoscale indentation tests with a fully controlled lighting system. The quantitative data analyses based on this photoindentation approach successfully demonstrate that the first pop-in stress indicating dislocation nucleation near the surface of ZnS clearly increases by light irradiation. Additionally, the room-temperature indentation creep tests show a drastic reduction of the dislocation mobility under light. Our approach demonstrates great potential in understanding the light effects on dislocation nucleation and mobility at the nanoscale, as most advanced technology-related semiconductors are limited in dimensions.
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- Author
- Atsutomo Nakamura; Xufei Fang; Ayaka Matsubara; Eita Tochigi; Yu Oshima; Tatsushi Saito; Tatsuya Yokoi; Yuichi Ikuhara; Katsuyuki Matsunaga
- Publisher
- American Chemical Society (ACS)
- Published
- 2021
- Language
- EN
- Field
- Engineering (Physical Sciences)