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Influence of growth rate on the structure of thick GaN layers grown by HVPE by T Paskova; E.M Goldys; R Yakimova; E.B Svedberg; A Henry; B Monemar is a Engineering article available to read on EtoBox.

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Thick GaN "lms grown by hydride vapour phase epitaxy have been investigated by cathodoluminecsence, X-ray di!raction, and photoluminescence. Cross-sectional studies of thick GaN layers grown on sapphire without bu!ers reveal three zones: a highly disordered interface region; a columnar defective region and a good quality main region of the layer. The in#uence of the highly doped columnar region on the surface morphology and crystal structure of the layers has been studied. We show that the columnar region in#uences the material quality more strongly in thinner "lms. Thicker layers exhibit improved morphology with lower surface pit density and better crystal quality shown in photoluminescence and X-ray di!raction spectra. The relationship between the near-interface columnar structures and surface pits is revealed. A strong e!ect of the growth rate on the structure of thick layers is found. The results suggest that GaN layers with optimum crystalline quality may be obtained by varying the growth rate during growth.

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Author

T Paskova; E.M Goldys; R Yakimova; E.B Svedberg; A Henry; B Monemar

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)