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About this Engineering article

A new minority carrier lifetime model for heavily doped GaAs and InGaAsP to obtain analytical solutions by C.R. Selvakumar is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
C.R. Selvakumar
Publisher
Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
Published
1987
Language
EN
Field
Engineering (Physical Sciences)