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About this Engineering article
A new minority carrier lifetime model for heavily doped GaAs and InGaAsP to obtain analytical solutions by C.R. Selvakumar is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C.R. Selvakumar
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 1987
- Language
- EN
- Field
- Engineering (Physical Sciences)