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About this Engineering article
Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs by Kaminski, N.; Sheppard, S.T.; Niemann, E. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Kaminski, N.; Sheppard, S.T.; Niemann, E.
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 1998
- Field
- Engineering (Physical Sciences)
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