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Can I read Immersion Nickel Deposition on Blank Silicon in Aqueous Solution Containing Ammonium Fluoride on EtoBox?
Immersion Nickel Deposition on Blank Silicon in Aqueous Solution Containing Ammonium Fluoride by Xi Zhang; Zhong Chen; K.N. Tu is a Engineering article available to read on EtoBox.
What is Immersion Nickel Deposition on Blank Silicon in Aqueous Solution Containing Ammonium Fluoride about?
Immersion deposition of Ni on p-Si (100) blank substrates was carried out in an aqueous NiSO 4 solution at a pH value of 8 through displacement reactions. Study of the early deposition stage revealed that incorporation of 2.5 M NH 4 F in solution promoted Ni nucleation significantly. By adding fluoride, it was observed that metallic Ni was deposited constantly at the expense of Si and the deposition was not selflimited. Sponge-like Ni deposits were observed and it might explain the non-limiting feature of such immersion Ni deposition over Si. Transmission electron microscopic images of Ni/Si cross-sections showed that during the reactions, Si oxide played a role of the intermediate phase. The whole process could have involved successive Si oxidation steps. Eventually the oxide was etched away by fluoride resulting in a nanoporous Ni film.
Who reads Immersion Nickel Deposition on Blank Silicon in Aqueous Solution Containing Ammonium Fluoride?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Xi Zhang; Zhong Chen; K.N. Tu
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)