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2SC3460 Transistor Specifications by SamuelSilva is a document available to read on EtoBox.
This document provides specifications for the NPN triple diffused planar silicon transistor 2SC3460 for use in 800V/6A switching regulator applications. Key features include a high breakdown voltage of 1100V, high reliability, fast switching time of 0.1μs typical, and wide safe operating area. Electrical characteristics include a minimum DC current gain of 8 at 2A collector current, and maximum collector-emitter saturation voltage of 2V at 3A collector current and 0.6A base current. The transistor is packag
- Author
- SamuelSilva
- Language
- EN