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Can I read Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer on EtoBox?
Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer by Linxing Shi; Xiangyin Li is a Materials Science article available to read on EtoBox.
What is Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer about?
ZnO/SiO 2 thin films were fabricated on Si substrates by E-beam evaporation with thermal retardation. The as-prepared films were annealed for 2 h every 100 1C in the temperature range 400-800 1C under ambient air. The structural and optical properties were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL). The XRD analysis indicated that all ZnO thin films had a highly preferred orientation with the c-axis perpendicular to the substrate. From AFM images (AFM scan size is 1 mm  1 mm), the RMS roughnesses of the films were 3.82, 5.18, 3.65, 3.40 and 13.2 nm, respectively. PL measurements indicated that UV luminescence at only 374 nm was observed for all samples. The optical quality of the ZnO film was increased by thermal retardation and by using an amorphous SiO 2 buffer layer.
Who reads Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Linxing Shi; Xiangyin Li
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-2313)
- Published
- 2011
- Language
- EN
- Field
- Materials Science (Physical Sciences)