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About this Engineering article
Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation by Mohamed Benzohra; François Olivie; Malika Idrissi-Benzohra; Kaouther Ketata; Mohamed Ketata is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Mohamed Benzohra; François Olivie; Malika Idrissi-Benzohra; Kaouther Ketata; Mohamed Ketata
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0168-583X)
- Published
- 2002
- Field
- Engineering (Physical Sciences)