About this Engineering article
Insulated Gate Bipolar Transistor with Trench Gate Structure of Accumulation Channel by Mengliang, Qian; Zehong, Li; Bo, Zhang; Zhaoji, Li is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Mengliang, Qian; Zehong, Li; Bo, Zhang; Zhaoji, Li
- Publisher
- IOP Publishing; Institute of Physics Publishing (ISSN 1674-4926)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)