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Modeling of thermal noise in short-channel MOSFETs at saturation by Chan Hyeong Park; Young June Park is a Engineering article available to read on EtoBox.
What is Modeling of thermal noise in short-channel MOSFETs at saturation about?
An analytical formula of excessive thermal noise in short-channel MOSFETs at saturation is developed following the approach used for GaAs JFET or MESFET by Statz, Haus, and Pucel. It is taken into account that the noise generated in the velocity saturation region comes from randomly generated dipole layers which propagate toward the drain contact without relaxation. Simulation of the derived formula shows that the velocity saturation region plays a crucial role in determining excessive thermal noise in short-channel MOSFETs. The proposed thermal noise formula is con®rmed by the comparison to the published experimental results of high-frequency noise in the short-channel nMOSFET of channel length 0.7 lm at saturation.
Who reads Modeling of thermal noise in short-channel MOSFETs at saturation?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chan Hyeong Park; Young June Park
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)