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Threshold Voltage Modeling of Carbon Nanotube Field-Effect Transistor (CNTFET) by S M Shakil; Muhammad S. Ullah is a scholarly article available to read on EtoBox.

What is Threshold Voltage Modeling of Carbon Nanotube Field-Effect Transistor (CNTFET) about?

A bstract-Analytical m odeling equations for characterizing the threshold voltage (Vth) o f carbon nanotube field effect transistor CNTFETs are presented in this study with chirality. The equa tions have been derived based on the charge and potential dis tributions existing between the gate and substrate in a CNTFET. The research demonstrates a significant correlation between the chiral vectors o f carbon nanotubes (CNTs) and their threshold voltage (Vth)• The findings indicate a high level o f coexistence between m athem atical and visual sim ulation m ethodologies. The findings indicate that the determ ined threshold voltage (Vth) o f a carbon nanotube field-effect transistor (CNTFET) possessing a chiral vector o f (7, 2) exhibits a high degree o f agreement with the relevant literature.

Author

S M Shakil; Muhammad S. Ullah

Publisher

IEEE

Published

2023

Language

EN