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Temperature Effects on InGaAs Diodes by Iskandar Zulkarnaen is a document available to read on EtoBox.

What is Temperature Effects on InGaAs Diodes about?

1. The document studies temperature-dependent transient capacitance in InGaAs/InP-based diodes using capacitance and pulse measurements. 2. Analysis of the capacitance changes with temperature and pulse length revealed a deep trap level with an effective cross-section of ~10-20 cm2 and concentration of ~1016 cm-3, located 0.30 eV from the conduction band. 3. The results are consistent with sub-bandgap photoluminescence measurements of similar structures and provide information about trap properties in t

Author
Iskandar Zulkarnaen
Language
EN