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What is TOSHIBA GT60N321 IGBT Specifications about?

The GT60N321 is a fourth generation Toshiba Insulated Gate Bipolar Transistor (IGBT) designed for high power switching applications, featuring a low saturation voltage of 2.3 V and a maximum collector-emitter voltage of 1000 V. It has a collector current rating of 60 A and includes a fast recovery diode (FRD) for improved performance. Key electrical characteristics include a typical switching time of 0.25 µs and a gate leakage current of ±500 nA.

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alialimolk2

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