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Approximate Storage in Solid-State Memories by Adrian Sampson; Jacob Nelson; Karin Strauss; Luis Ceze is a Computer Science article available to read on EtoBox.

What is Approximate Storage in Solid-State Memories about?

Memories today expose an all-or-nothing correctness model that incurs significant costs in performance, energy, area, and design complexity. But not all applications need high-precision storage for all of their data structures all of the time. This article proposes mechanisms that enable applications to store data approximately and shows that doing so can improve the performance, lifetime, or density of solid-state memories. We propose two mechanisms. The first allows errors in multilevel cells by reducing the number of programming pulses used to write them. The second mechanism mitigates wear-out failures and extends memory endurance by mapping approximate data onto blocks that have exhausted their hardware error correction resources. Simulations show that reduced-precision writes in multilevel phase-change memory cells can be 1.7 × faster on average and using failed blocks can improve array lifetime by 23% on average with quality loss under 10%.

Who reads Approximate Storage in Solid-State Memories?

Author

Adrian Sampson; Jacob Nelson; Karin Strauss; Luis Ceze

Publisher

Association for Computing Machinery; Association for Computing Machinery (ACM) (ISSN 0734-2071)

Published

2014

Language

EN

Field

Computer Science (Physical Sciences)