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About this Engineering article
A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFETs by Ang, D.S.; Ling, C.H. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ang, D.S.; Ling, C.H.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 1998
- Language
- EN
- Field
- Engineering (Physical Sciences)